Theme 3: Spin Metrology

The characterization and understanding of complex spin states at interfaces, spin coherence and lifetimes as well as spin injection are crucial in realizing spin-based devices and circuits. To do so, spin and electron correlated metrology capabilities require further development far beyond well established metrology methods such as SQUID, magneto-transport, magnetic force microscopy and others that are routinely used today. This theme aims to develop new capabilities that measure spin concentrations and interactions (correlated and uncorrelated) at the nanometer and atomic level. Interaction between spin and carriers, local electric and magnetic fields, stress interactions with spins and switching dynamics in nanometer devices are just some of the important measurement areas required to be dramatically enhanced in resolution and sensitivity. In addition, this theme cuts across Themes 1-3 to coordinate the characterization efforts and thus will significantly enhance ongoing integrated metrology efforts.